Work

Influence of impurities and crystalline defects on electron mobility in heavily doped silicon

Year: 1979

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.326119

Authors: M. Finetti, R. Galloni, A. M. Mazzone

Institution: Bologna Research Area

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2000376439

FWCI: 2.251

Cites: 9

Cited by: 30

Related to: 10