Author

Roman Stępniewski

Observed names: R . Stepniewski, R Stepniewski, R Stȩpniewski, R. STĘPNIEWSKI, R. Stepniewski, R. Ste̢pniewski, R. Stȩpniewski, R. Stępniewski, R. Stȩpniewski, ROMAN STȨPNIEWSKI, Roman Stepniewski, Roman Stȩpniewski, STEPNIEWSKI, Roman, Stepniewski, R., Stępniewski, R., Stępniewski, Roman

Institution: University of Warsaw

Observed institutions: Centre National de la Recherche Scientifique, Max Planck Society, Laboratoire National des Champs Magnétiques Intenses, Institute of Physics, University of Warsaw, Polish Academy of Sciences

ORCID: 0000-0002-7557-7328

Observed ORCID: 0000-0002-7557-7328

OpenAlex ID: A5029344938

Observation of Native Ga Vacancies in GaN by Positron Annihilation

1997 · K. Saarinen, T. Laine, et al. · Physical Review Letters · 505

Graphene Epitaxy by Chemical Vapor Deposition on SiC

2011 · W. Strupinski, K. Grodecki, et al. · Nano Letters · 352

Exciton region reflectance of homoepitaxial GaN layers

1996 · K. P. Korona, A. Wysmol/ek, et al. · Applied Physics Letters · 151

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

1996 · K. Pakuła, A. Wysmołek, et al. · Solid State Communications · 131

Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene

2010 · A. M. Witowski, M. Orlita, et al. · Physical Review B · 98

Polariton effects in reflectance and emission spectra of homoepitaxial GaN

1997 · R. Stȩpniewski, K. P. Korona, et al. · Physical review. B, Condensed matter · 95

Auger recombination within Landau levels in a two-dimensional electron gas

1991 · M. Potemski, R. Stepniewski, et al. · Physical Review Letters · 74

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

2002 · A. Wysmolek, K. P. Korona, et al. · Physical review. B, Condensed matter · 69

Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001)

2009 · J. Borysiuk, R. Bożek, et al. · Journal of Applied Physics · 68

Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach

2020 · Aleksandra Krystyna Dąbrowska, Mateusz Tokarczyk, et al. · 2D Materials · 56

Symmetry of excitons in GaN

1999 · R. Stȩpniewski, M. Potemski, et al. · Physical review. B, Condensed matter · 53

Role of structure of C-terminated 4H -SiC( 0001¯ ) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

2012 · J. Borysiuk, J. Sołtys, et al. · Physical Review B · 40

Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC

2010 · J. Borysiuk, R. Bożek, et al. · Journal of Applied Physics · 40

The chemical vapour transport growth of ZnO single crystals

2003 · A. Mycielski, L. Kowalczyk, et al. · Journal of Alloys and Compounds · 39

Raman Optical Activity of 1T-TaS 2

2022 · Ewa M. Lacinska, Magdalena Furman, et al. · Nano Letters · 38

Electronic structure of commensurate, nearly commensurate, and incommensurate phases of 1T−TaS2 by angle-resolved photoelectron spectroscopy, scanning tunneling spectroscopy, and density functional theory

2018 · I. Lutsyk, M. Rogala, et al. · Physical review. B./Physical review. B · 38

Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres

2021 · Katarzyna Ludwiczak, Aleksandra Krystyna Da̧browska, et al. · ACS Applied Materials & Interfaces · 36

Growth kinetics of epitaxial graphene on SiC substrates

2010 · A. Drabińska, K. Grodecki, et al. · Physical Review B · 33

Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

2013 · M. Tokarczyk, G. Kowalski, et al. · Applied Physics Letters · 31

Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface

2012 · K. Grodecki, R. Bozek, et al. · Applied Physics Letters · 31

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

1997 · K. Saarinen, T. Laine, et al. · MRS Proceedings · 31

Towards practical applications of quantum emitters in boron nitride

2021 · M. Koperski, K. Pakuła, et al. · Scientific Reports · 29

Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy

2023 · Mateusz Tokarczyk, Aleksandra Krystyna Dąbrowska, et al. · 2D Materials · 27

Structural and Optical Properties of Homoepitaxial GaN Layers

1996 · J. M. Baranowski, Z. Liliental-Weber, et al. · MRS Proceedings · 27

Photon correlation studies of charge variation in a single GaAlAs quantum dot

2013 · B. Piętka, J. Suffczyński, et al. · Physical Review B · 26

Works count: 144

Citation count: 2,749

H-index: 26

I10-index: 51