Work

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

Year: 2002

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.66.245317

Authors: A. Wysmolek, K. P. Korona, R. Stȩpniewski, J. M. Baranowski, J. Błoniarz, M. Potemski, R. L. Jones, D. C. Look, J. Kuhl, S. S. Park, S. K. Lee

Institutions: Centre National de la Recherche Scientifique, Laboratoire National des Champs Magnétiques Intenses, University of Warsaw, United States Air Force Research Laboratory, Wright-Patterson Air Force Base, Wright State University, Max Planck Institute for Solid State Research, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2086968075

FWCI: 2.544

Cites: 22

Cited by: 69

Related to: 10