Author

S. S. Park

Observed names: S. S. PARK, S.S Park, S.S. Park, Seongeon Park, Seong‐Il Park

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Observed institutions: United States Naval Research Laboratory, Samsung (South Korea), Korea Electronics Technology Institute, Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea), Samsung Display (South Korea)

ORCID: 0009-0004-3823-853X

Observed ORCID: 0009-0004-3823-853X

OpenAlex ID: A5110124778

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

2003 · J. Oila, J. Kivioja, et al. · Applied Physics Letters · 128

Deep centers in a free-standing GaN layer

2001 · Z.-Q. Fang, D. C. Look, et al. · Applied Physics Letters · 107

2002 · J. A. Freitas, W. J. Moore, et al. · Physical review. B, Condensed matter · 95

β- Ga 2 O 3 nanowires synthesized from milled GaN powders

2002 · B. C. Kim, K. T. Sun, et al. · Applied Physics Letters · 86

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

2002 · M. A. Reshchikov, H. Morkoç, et al. · Applied Physics Letters · 81

Measurement of second order susceptibilities of GaN and AlGaN

2005 · N. A. Sanford, A. V. Davydov, et al. · Journal of Applied Physics · 77

Yellow and green luminescence in a freestanding GaN template

2001 · M. A. Reshchikov, H. Morkoç, et al. · Applied Physics Letters · 74

Vertical and lateral GaN rectifiers on free-standing GaN substrates

2001 · A. P. Zhang, J. W. Johnson, et al. · Applied Physics Letters · 71

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

2001 · D. Huang, F. Yun, et al. · Solid-State Electronics · 70

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

2002 · A. Wysmolek, K. P. Korona, et al. · Physical review. B, Condensed matter · 69

Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN

2002 · W. J. Moore, J. A. Freitas, et al. · Physical review. B, Condensed matter · 64

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

2001 · M. A. Reshchikov, D. Huang, et al. · Applied Physics Letters · 59

Characterization of free-standing hydride vapor phase epitaxy GaN

2001 · J. Jasinski, W. Swider, et al. · Applied Physics Letters · 55

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Unusual luminescence lines in GaN

2003 · M. A. Reshchikov, D. Huang, et al. · Journal of Applied Physics · 52

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

2004 · Y. Liu, M. Z. Kauser, et al. · Applied Physics Letters · 51

Identification of the Γ5 and Γ6 free excitons in GaN

2000 · D. C. Reynolds, D. C. Look, et al. · Applied Physics Letters · 47

Optical properties of GaN grown by hydride vapor-phase epitaxy

2001 · Eunsoon Oh, S. K. Lee, et al. · Applied Physics Letters · 40

Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers

2003 · E. R. Glaser, J. A. Freitas, et al. · Physical review. B, Condensed matter · 37

Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration

2000 · P. Visconti, K. M. Jones, et al. · Applied Physics Letters · 36

Transient photoluminescence of defect transitions in freestanding GaN

2001 · M. A. Reshchikov, H. Morkoç, et al. · Applied Physics Letters · 35

Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

2000 · F Yun, M.A Reshchikov, et al. · Solid-State Electronics · 35

4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method

2011 · Chul‐Kyu Kang, Yong‐Sung Park, et al. · SID Symposium Digest of Technical Papers · 30

Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

2003 · Y. S. Huang, Fred H. Pollak, et al. · Journal of Applied Physics · 29

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

2002 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 29

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Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

2005 · Ü. Özgür, Y. Fu, et al. · Applied Physics Letters · 27

Works count: 59

Citation count: 1,749

H-index: 26

I10-index: 35