Work

Identification of the Γ5 and Γ6 free excitons in GaN

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1322054

Authors: D. C. Reynolds, D. C. Look, B. Jogai, A. W. Saxler, S. S. Park, J. Y. Hahn

Institutions: United States Air Force Research Laboratory, Wright State University, Wright-Patterson Air Force Base, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W305964560

FWCI: 4.198

Cites: 8

Cited by: 47

Related to: 10