Work

Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy

Year: 2003

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1582230

Authors: Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, H. Morkoç

Institutions: City University of New York, Brooklyn College, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Virginia Commonwealth University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Office of Naval Research

OpenAlex ID: W1980424384

FWCI: 0.636

Cites: 29

Cited by: 29

Related to: 10