Work

Vertical and lateral GaN rectifiers on free-standing GaN substrates

Year: 2001

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1400771

Authors: A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, J.-I. Chyi

Institutions: University of Florida, Samsung Advanced Institute of Technology (South Korea), National Central University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2017095465

FWCI: 0.765

Cites: 26

Cited by: 71

Related to: 10