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B. Luo

Observed name: B Luo
ORCID: 0009-0004-7773-4966
Observed ORCID: 0009-0004-7773-4966
OpenAlex ID: A5078326554
Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO
2003 · K. Ip, M. E. Overberg, et al. · Applied Physics Letters · 210
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
2002 · B. Luo, J. W. Johnson, et al. · Applied Physics Letters · 177
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
2003 · R. Mehandru, B. Luo, et al. · Applied Physics Letters · 145
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
2001 · B. Luo, J. W. Johnson, et al. · Applied Physics Letters · 121
Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes
2002 · Jihyun Kim, R. Mehandru, et al. · Applied Physics Letters · 99
Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor
2000 · J. W. Johnson, B. Luo, et al. · Applied Physics Letters · 99
Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
2002 · B. Luo, J. W. Johnson, et al. · Applied Physics Letters · 88
Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs
2001 · B.P. Gila, J.W. Johnson, et al. · physica status solidi (a) · 88
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AlGaN/GaN HEMT based liquid sensors
2003 · R. Mehandru, B. Luo, et al. · Solid-State Electronics · 74
Inversion behavior in Sc2O3/GaN gated diodes
2002 · Jihyun Kim, R. Mehandru, et al. · Applied Physics Letters · 73
Vertical and lateral GaN rectifiers on free-standing GaN substrates
2001 · A. P. Zhang, J. W. Johnson, et al. · Applied Physics Letters · 71
AlGaN/GaN $Ka$-Band 5-W MMIC Amplifier
2006 · Ali Mohamed Darwish, K. Boutros, et al. · IEEE Transactions on Microwave Theory and Techniques · 68
Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
2002 · J. Kim, B. Gila, et al. · Journal of The Electrochemical Society · 62
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Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO
2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 59
High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
2002 · B. Luo, J. W. Johnson, et al. · Journal of Electronic Materials · 51
Hydrogen incorporation, diffusivity and evolution in bulk ZnO
2003 · K. Ip, M.E. Overberg, et al. · Solid-State Electronics · 50
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
2002 · J.K. Gillespie, R.C. Fitch, et al. · IEEE Electron Device Letters · 48
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
2002 · B Luo, J.W Johnson, et al. · Solid-State Electronics · 45
Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
2002 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 43
Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
2002 · B. Luo, R. Mehandru, et al. · Journal of The Electrochemical Society · 43
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Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization
2003 · B. Luo, F. Ren, et al. · Applied Physics Letters · 40
Hydrogen plasma passivation effects on properties of p-GaN
2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 39
Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
2003 · B. Luo, Jihyun Kim, et al. · Applied Physics Letters · 37
SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors
2001 · J. W. Johnson, B. P. Gila, et al. · Journal of The Electrochemical Society · 36
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Advantages and limitations of MgO as a dielectric for GaN
2003 · B.P. Gila, J. Kim, et al. · Solid-State Electronics · 35
Works count: 106
Citation count: 2,579
H-index: 29
I10-index: 53
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