Work

Hydrogen plasma passivation effects on properties of p-GaN

Year: 2003

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1603343

Authors: A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, K. H. Baik, S. J. Pearton, B. Luo, F. Ren, J. M. Zavada

Institutions: University of Florida, United States Army Research Office

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Foundation for Basic Research

OpenAlex ID: W2044969760

FWCI: 0.849

Cites: 31

Cited by: 39

Related to: 10