Author

Anatoliy V. Govorkov

Observed names: A V Govorkov, A. V. GOVORKOV, A. V. Govorkov, A.V Govorkov, A.V. Govorkov, Anatoli Govorkov, Anatolij Govorkov, Anatolij V. Govorkov, Anatoliy Govorkov, Anatoliy V Govorkov, Anatolyi V. Govorkov, Говорков, А. В.

Observed institutions: National University of Science and Technology, ITMO University, Yale University, University of Florida, Nitride Crystals (United States), Giredmet (Russia), Nagoya University, Carnegie Mellon University, Jeonbuk National University, Ioffe Institute

OpenAlex ID: A5015342153

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

1998 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 108

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

1998 · A.Y Polyakov, N.B Smirnov, et al. · Solid-State Electronics · 105

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

2001 · A. P. Zhang, J. W. Johnson, et al. · Applied Physics Letters · 92

Properties of Si donors and persistent photoconductivity in AlGaN

1998 · A.Y. Polyakov, N.B. Smirnov, et al. · Solid-State Electronics · 91

Proton implantation effects on electrical and recombination properties of undoped ZnO

2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 81

Electrical and optical properties of Cr and Fe implanted n-GaN

2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 75

Effects of proton implantation on electrical and recombination properties of n-GaN

2000 · A.Y Polyakov, A.S Usikov, et al. · Solid-State Electronics · 68

Fast neutron irradiation effects in n-GaN

2007 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 67

Electrical and optical properties of Fe-doped semi-insulating GaN templates

2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Applied Physics Letters · 64

Deep traps in high resistivity AlGaN films

1998 · A.Y. Polyakov, N.B. Smirnov, et al. · Solid-State Electronics · 61

Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

2003 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 59

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

2007 · A. Y. Polyakov, N. B. Smirnov, et al. · Applied Physics Letters · 58

Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe

2004 · A.Y. Polyakov, A.V. Govorkov, et al. · Materials Science in Semiconductor Processing · 57

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

2011 · A. Y. Polyakov, I.-H. Lee, et al. · Journal of Applied Physics · 55