Work

Electrical and optical properties of GaN films implanted with Mn and Co

Year: 2002

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1499977

Authors: A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashkova, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. G. Wilson

Institution: University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Foundation for Basic Research

OpenAlex ID: W2020385585

FWCI: 3.604

Cites: 23

Cited by: 46

Related to: 10