Work

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

Year: 2011

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3599894

Authors: A. Y. Polyakov, I.-H. Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, S. J. Pearton

Institutions: Jeonbuk National University, University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Chonbuk National University, National Research Foundation of Korea

OpenAlex ID: W2009063446

FWCI: 2.89

Cites: 34

Cited by: 55

Related to: 10