Author

I.-H. Lee

Observed name: I-H. Lee

Institution: Jeonbuk National University

Observed institutions: Yale University, Jeonbuk National University

OpenAlex ID: A5086336255

Nitrogen-polar GaN growth evolution on c-plane sapphire

2008 · Q. Sun, Y. S. Cho, et al. · Applied Physics Letters · 74

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

2011 · A. Y. Polyakov, I.-H. Lee, et al. · Journal of Applied Physics · 55

Fermi level pinning in heavily neutron-irradiated GaN

2006 · A. Y. Polyakov, N. B. Smirnov, et al. · Journal of Applied Physics · 41

Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

2011 · C.H. Hong, Y.J. Jo, et al. · Thin Solid Films · 32

Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

2010 · J.-S. Song, H. Rho, et al. · Physical Review B · 32

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

2009 · A.Y. Polyakov, N.B. Smirnov, et al. · Materials Science and Engineering B · 27

Neutron irradiation effects in AlGaN/GaN heterojunctions

2006 · A.Y. Polyakov, N.B. Smirnov, et al. · Physica B Condensed Matter · 21

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

2009 · A.Y. Polyakov, N.B. Smirnov, et al. · Materials Science and Engineering B · 10

a -plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers

2010 · A. Y. Polyakov, A. V. Markov, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 1

Works count: 9

Citation count: 293

H-index: 8

I10-index: 8