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Yoshisato Yokoyama
Observed name:
Y. Yokoyama
Institution:
Taiwan Semiconductor Manufacturing Company (Taiwan)
Observed institutions:
Tokyo Institute of Technology,
Kyoto Institute of Technology,
Taiwan Semiconductor Manufacturing Company (Taiwan),
Mitsubishi Electric (Japan),
Renesas Electronics (Japan)
ORCID:
0000-0001-8552-4070
Observed ORCID:
0000-0001-8552-4070
OpenAlex ID:
A5031531908
On-Chip Variable Inductor Using Microelectromechanical Systems Technology
2003
·
Yoshisato Yokoyama
, Takashi Fukushige
, et al.
·
Japanese Journal of Applied Physics
·
40
PDF
Fabrication and evaluation of an on-chip micro-variable inductor
2003
·
T. Fukushige
, Y. Yokoyama
, et al.
·
Microelectronic Engineering
·
26
Variable RF Inductor on Si CMOS Chip
2004
·
Hirotaka Sugawara
, Yoshisato Yokoyama
, et al.
·
Japanese Journal of Applied Physics
·
24
PDF
A 29.2 Mb/mm2 Ultra High Density SRAM Macro using 7nm FinFET Technology with Dual-Edge Driven Wordline/Bitline and Write/Read-Assist Circuit
2020
·
Yoshisato Yokoyama
, Miki Tanaka
, et al.
·
IEEE Symposium on VLSI Circuits (VLSI-Circuits)
·
18
2RW dual-port SRAM design challenges in advanced technology nodes
2015
·
Koji Nii
, Makoto Yabuuchi
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
Equivalent Circuit Analysis of RF-Integrated Inductors with/without Ferromagnetic Material
2003
·
Masahiro Yamaguchi
, Yoshisato Yokoyama
, et al.
·
Japanese Journal of Applied Physics
·
14
PDF
Disturbance Aware Dynamic Power Reduction in Synchronous 2RW Dual-Port 8T SRAM by Self-Adjusting Wordline Pulse Timing
2022
·
Yoshisato Yokoyama
, Koji Nii
, et al.
·
IEEE Journal of Solid-State Circuits
·
13
40 nm Dual-port and two-port SRAMs for automotive MCU applications under the wide temperature range of −40 to 170°C with test screening against write disturb issues
2014
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
11
40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU
2014
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
8
Variable RF Inductor on Si CMOS Chip
2003
·
Shinichiro Gomi
, Yoshisato Yokoyama
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
7
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture
2024
·
Masaru Haraguchi
, Yorinobu Fujino
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
5
A dynamic power reduction in synchronous 2RW 8T dual-port SRAM by adjusting wordline pulse timing with same/different row access mode
2017
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
5
Cost-Effective Test Screening Method on 40-nm Embedded SRAMs for Low-Power MCUs
2021
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
·
4
A cost effective test screening method on 40-nm 4-Mb embedded SRAM for low-power MCU
2015
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
4
40-nm 64-kbit Buffer/Backup SRAM with 330 nW Standby Power at 65°C Using 3.3 V IO MOSs for PMIC less MCU in IoT Applications
2018
·
Yoshisato Yokoyama
, Tomohiro Miura
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
3
On-Chip Variable Inductor Using MEMS Technology
2002
·
Yoshisato Yokoyama
, Takashi Fukushige
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
3
A 3 nm-FinFET 4.3 GHz 21.1 Mb/mm 2 Double-Pumping 1-Read and 1-Write Psuedo-2-Port SRAM With a Folded Bitline Multi-Bank Architecture
2024
·
Masaru Haraguchi
, Yorinobu Fujino
, et al.
·
IEEE Journal of Solid-State Circuits
·
2
A Cost Effective Test Screening Circuit for embedded SRAM with Resume Standby on 110-nm SoC/MCU
2019
·
Yoshisato Yokoyama
, Kenji Goto
, et al.
·
IEEE Asian Solid-State Circuits Conference (A-SSCC)
·
1
Fabrication Of Wrapped Micro Coils Wound Around A Magnetic Core
2005
·
N. Yamada
, Y. Yokoyama
, et al.
·
Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95
·
1
A Dynamic Power Reduction in Synchronous 2RW 8T Dual-Port SRAM by Adjusting Wordline Pulse Timing with Same/Different Row Access Mode
2018
·
Yoshisato Yokoyama
, Yuichiro Ishii
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
A Cost Effective Test Screening Method on 40-nm 4-Mb Embedded SRAM for Low-power MCU
2016
·
Yuta Yoshida
, Yoshisato Yokoyama
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
40 nm Dual-port and Two-port SRAMs for Automotive MCU Applications under the Wide Temperature Range of -40 to 170℃ with Test Screening Against Write Disturb Issues
2015
·
Yoshisato Yokoyama
, Ishii Yuichiro
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
Equivalent circuit analysis of RF integrated inductors with/without ferromagnetic material
2002
·
Masahiro Yamaguchi
, Yoshisato Yokoyama
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
GHz Clock Distribution Using Transmission Line Interconnect and CMOS Differential Driver Circuit in Si ULSI
2001
·
Yoshisato Yokoyama
, Tomohito Tsushima
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Interconnect Length Distribution in Si System ULSI
2001
·
Naohiro Takagi
, Hiyouko Shinoki
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
26
Citation count:
204
H-index:
8
I10-index:
8
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