Get started
Author

Thomas Witters

Observed names: T. Witters, Witters, Thomas
Institution: IMEC
ORCID: 0000-0002-8528-9469
Observed ORCID: 0000-0002-8528-9469
OpenAlex ID: A5031748112
Ternary rare-earth metal oxide high-k layers on silicon oxide
2005 · C. Zhao, T. Witters, et al. · Applied Physics Letters · 133
PDF
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
2015 · Y. Hayakawa, A. Himeno, et al. · Symposium on VLSI Technology · 94
Ovonic Threshold‐Switching Ge x Se y Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
2020 · Sergiu Clima, Daniele Garbin, et al. · physica status solidi (RRL) - Rapid Research Letters · 88
PDF
Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
2017 · B. Govoreanu, G. L. Donadio, et al. · Symposium on VLSI Technology · 68
Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
2011 · A. Redolfi, D. Velenis, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 52
Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
2005 · M. Schmidt, M.C. Lemme, et al. · Microelectronic Engineering · 50
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device
2014 · L. Goux, A. Fantini, et al. · Symposium on VLSI Technology · 47
High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
2014 · Leqi Zhang, Bogdan Govoreanu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
2018 · Naga Sruti Avasarala, G. L. Donadio, et al. · Symposium on VLSI Technology · 31
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
2015 · Y. Hayakawa, A. Himeno, et al. · Symposium on VLSI Circuits · 30
Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor
2015 · Yang-Shun Fan, Leqi Zhang, et al. · IEEE Electron Device Letters · 28
Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1−x materials for selector applications
2017 · S. Clima, B. Govoreanu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
2009 · Zilan Li, Tom Schram, et al. · Microelectronic Engineering · 22
Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films
2007 · An Hardy, Sven Van Elshocht, et al. · Journal of materials research/Pratt's guide to venture capital sources · 22
Key material parameters driving CBRAM device performances
2018 · Ludovic Goux, Janaki Radhakrishnan, et al. · Faraday Discussions · 20
PDF
Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide
2006 · C. Zhao, T. Witters, et al. · Microelectronic Engineering · 20
Co Active Electrode Enhances CBRAM Performance and Scaling Potential
2019 · A. Belmonte, J. Radhakrishnan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
2011 · J. Swerts, S. Armini, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 19
Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors
2006 · S. Van Elshocht, P. Lehnen, et al. · Journal of The Electrochemical Society · 19
Bulk Properties of MOCVD-Deposited HfO[sub 2] Layers for High k Dielectric Applications
2004 · Sven Van Elshocht, Mikhail Baklanov, et al. · Journal of The Electrochemical Society · 19
PDF
Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
2007 · S. Kubicek, T. Schram, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node
2019 · V. Vega-Gonzalez, C. J. Wilson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Chemisorption of ALD precursors in and on porous low-k films
2013 · P. Verdonck, A. Delabie, et al. · Microelectronic Engineering · 17
Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates
2008 · Zilan Li, Tom Schram, et al. · Journal of The Electrochemical Society · 17
PDF
Aqueous Chemical Solution Deposition
2007 · S. Van Elshocht, A. Hardy, et al. · Electrochemical and Solid-State Letters · 17
PDF
Works count: 95
Citation count: 1,174
H-index: 19
I10-index: 31
Year
Topic
Type