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Cheol-Goo Park
Institution:
Samsung Electronics (South Korea)
Observed institutions:
Samsung (South Korea),
Samsung Electronics (South Korea)
OpenAlex ID:
A5035429565
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques
2008
·
Seung-Jun Bae
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
47
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
IEEE Journal of Solid-State Circuits
·
34
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW
2011
·
Seung-Jun Bae
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
33
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
9
2.5nsバンクツーバンクアクティブ時間を持ちバンクグループ制限の無い7Gb/s/pin GDDR5 SDRAM
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
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Works count:
5
Citation count:
123
H-index:
4
I10-index:
3
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