Author

Ph. Salles

Observed names: P H Salles, P SALLES, P. Salles, Ph Salles, Salles, P., Salles, P. (P.)

Observed institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Institut National des Sciences Appliquées de Toulouse, University of Surrey, University of Manchester, Centre d’Élaboration de Matériaux et d’Études Structurales, University of Southampton, Université de Toulouse

OpenAlex ID: A5036242529

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

2008 · Dayen, J. (J.F.), Mahmood, A. (A.), et al. · LillOA (Université de Lille (University Of Lille)) · 40

Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering

2011 · V. Laneuville, F. Demangeot, et al. · Physical Review B · 35

Applications of focused ion beam for preparation of specimens of ancient ceramic for electron microscopy and synchrotron X-ray studies

2009 · Ph. Sciau, Ph. Salles, et al. · Micron · 33

Electrochemical performances of vitreous materials in the system Li2O–V2O5–P2O5 as electrode for lithium batteries

2013 · G. Delaizir, V. Seznec, et al. · Solid State Ionics · 32

The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing

1991 · F. Marou, A. Claverie, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 23

Anionic conductors Ln2/3[Bi12O14](MoO4)5 with Ln=La, Nd, Gd, Ho, Yb. Synthesis–spark plasma sintering–structure–electric properties

2006 · J GALY, P SALLES, et al. · Solid State Ionics · 21

Ionic conductivity and phase transition in Pb4.8Bi1.6Na3.6(PO4)6, an apatite-type compound

2006 · B HAMDI, H ELFEKI, et al. · Solid State Ionics · 14

Synthesis of new mixed valence compounds : Crystal structure of NH4V3O7 and electrical properties of KV3O7

2007 · J.C. Trombe, O. Szajwaj, et al. · Journal of Solid State Chemistry · 13

Regrowth behaviour of Si1−Ge /Si structures formed by Ge+ ion implantation and post amorphisation

1994 · J.P. Zhang, R.J. Wilson, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 12

Two-dimensional damage distribution induced by ion implantation in Si under arbitrarily shaped mask edges: Simulations and cross-sectional transmission electron microscopy observations

1992 · M. M. Faye, J. Beauvillain, et al. · Journal of Applied Physics · 8

X-ray diffraction, Raman study and electrical properties of the new mixed compound [Rb0.44(NH4)0.56]2HgCl4·H2O

2004 · M Loukil, A Kabadou, et al. · Chemical Physics · 6

Lateral damage extension during masked ion implantation into GaAs

1996 · M. M. Faye, C. Vieu, et al. · Journal of Applied Physics · 4

TEM specimen preparation by Au+, Ga+, Si+ and Si++ focused ion beams for off-axis electron holography

2009 · G. BenAssayag, P. Salles, et al. · Microelectronic Engineering · 2

ChemInform Abstract: Synthesis of New Mixed Valence Compounds MV5+V4+2O7 (M: NH4, K): Crystal Structure of NH4V3O7 and Electrical Properties of KV3O7.

2008 · J. C. Trombe, O. Szajwaj, et al. · ChemInform · 2

Specimen preparation for off-axis electron holography using focused ions, energy filters and laser beams

2010 · D Cooper, B Aventurier, et al. · Journal of Physics Conference Series · 1

Structural and Dielectric Characterisation of the Relaxor Ferroelectric Solid Solution (1−x)PbMg 1/3 Nb 2/3 O 3 /(x)BiMg 2/3 Nb 1/3 O 3

2002 · A.-M. Castagnos, Ph. Salles, et al. · Ferroelectrics

Works count: 18

Citation count: 246

H-index: 9

I10-index: 9