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Reza Moazzami

Electrical characteristics of ferroelectric PZT thin films for DRAM applications
1992 · R. Moazzami, C. Hu, et al. · IEEE Transactions on Electron Devices · 282
Temperature acceleration of time-dependent dielectric breakdown
1989 · R. Moazzami, J.C. Lee, et al. · IEEE Transactions on Electron Devices · 149
Ferroelectric non-volatile memories for low-voltage, low-power applications
1995 · R.E. Jones, P.D. Maniar, et al. · Thin Solid Films · 137
A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors
1994 · C. Sudhama, A. C. Campbell, et al. · Journal of Applied Physics · 133
Projecting gate oxide reliability and optimizing reliability screens
1990 · R. Moazzami, C. Hu · IEEE Transactions on Electron Devices · 113
Economic Analysis of Networking Technologies for Rural Developing Regions
2005 · Shridhar Mubaraq Mishra, John Hwang, et al. · Lecture notes in computer science · 76
A ferroelectric DRAM cell for high-density NVRAMs
1990 · R. Moazzami, C. Hu, et al. · IEEE Electron Device Letters · 70
Ferroelectric thin film technology for semiconductor memory
1995 · R Moazzami · Semiconductor Science and Technology · 65
Circuit reliability simulator-oxide breakdown module
2003 · E. Rosenbaum, P.M. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 33
A high-quality stacked thermal/LPCVD gate oxide technology for ULSI
1993 · R. Moazzami, C. Hu · IEEE Electron Device Letters · 30
Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown
2003 · R. Moazzami, J. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Materials interactions in the integration of PZT ferroelectric capacitors
1995 · R. E. Jones, P. D. Maniar, et al. · Integrated ferroelectrics · 22
Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics
1993 · P.D. Maniar, R. Moazzami, et al. · MRS Proceedings · 19
Impact of Polarization Relaxation on Ferroelectric Memory Performance
1991 · R. Moazzami, N. Abt, et al. · Symposium on VLSI Technology · 18
Endurance properties of ferroelectric PZT thin films
2002 · R. Moazzami, C. Hu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
A ferroelectric DRAM cell for high density NVRAMs
1990 · R. Moazzami, Chen Ming Hu Chen Ming Hu, et al. · Symposium on VLSI Technology · 17
Electrical Conduction and Breakdown in Sol-Gel Derived PZT Thin Films
1990 · Reza Moazzami, Chenming Hu, et al. · IEEE International Reliability Physics Symposium proceedings · 16
High-permittivity lead-based perovskite dielectrics for DRAM applications
1994 · R. E. Jones, P. D. Maniar, et al. · Integrated ferroelectrics · 14
Anomalous remanent polarization in ferroelectric capacitors
1992 · Norman Abt, Reza Moazzami, et al. · Integrated ferroelectrics · 14
Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testing
2002 · E. Rosenbaum, R. Moazzami, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 10
Impact of post processing damage on the performance of high dielectric constant PLZT thin film capacitors for ULSI DRAM applications
2002 · R. Khamankar, Jiyoung Kim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Electron Microscopy Study of the Influence of the Adhesion Layer for Pt Electrode on the Microstructure of Sol-Gel Crystallized Pzt
1993 · Vidya Kaushik, Papu Maniar, et al. · MRS Proceedings · 5
Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory
2005 · R. Moazzami, P.D. Maniar, et al. · Non-Volatile Memory Technology Symposium · 4
La doped PZT films for gigabit DRAM technology
2002 · Jiyoung Kim, R. Khamankar, et al. · Symposium on VLSI Technology · 4
Integration of ferroelectric capacitor technology with CMOS
2002 · R. Moazzami, P.D. Maniar, et al. · Symposium on VLSI Technology · 4
Works count: 32
Citation count: 1,300
H-index: 16
I10-index: 20
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