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Stan S. Todorov
Observed names:
S. Todorov,
S.S. Todorov,
Stan Todorov
Observed institutions:
Applied Materials (United States),
University of Surrey,
Institute of Electronics,
Varian Medical Systems (United States)
OpenAlex ID:
A5042346397
Profile evolution during ion beam etching of germanium targets
1983
·
I.H. Wilson
, S.S. Todorov
, et al.
·
Nuclear Instruments and Methods in Physics Research
·
11
VIISta 900 3D: Advanced medium current implanter
2014
·
Frank Sinclair
, Joe Olson
, et al.
·
International Conference on Ion Implantation Technology
·
7
Overlay Control in HAR device integration
2023
·
Pradeep Subrahmanyan
, Wonjae Lee
, et al.
·
IEEE International Memory Workshop (IMW)
·
4
“Abnormal” angle response curves of TW/Rs for near zero tilt and high tilt channeling implants
2012
·
Baonian Guo
, Hans-Joachim Gossmann
, et al.
·
AIP conference proceedings
·
4
Beam incidence angle control advantages of high-current single wafer implanters
2002
·
A. Bertuch
, N. Variam
, et al.
·
International Conference on Ion Implantation Technology
·
4
Advances in cross-contamination control using single-wafer, high-current implantation
2002
·
S.S. Todorov
, A. Bertuch
, et al.
·
International Conference on Ion Implantation Technology
·
3
Custom Wafer Dose Patterning for Automated Process Control in Semiconductor Device Fabrication
2018
·
Stan S. Todorov
, Allen Pitzer
, et al.
·
International Conference on Ion Implantation Technology
·
2
SuperScan™: Customized wafer dose patterning
2014
·
Stan S. Todorov
, John Sawyer
, et al.
·
International Conference on Ion Implantation Technology
·
2
Cryogenic BF2+ Implantation near Amorphization Threshold Dose for Halo Junctions in Sub-30 nm Device Technologies
2011
·
H. H. Park
, S. Todorov
, et al.
·
Electrochemical and Solid-State Letters
·
2
PDF
Performance characteristics of the Varian VIISta 810 single wafer medium current ion implanter
2002
·
A. Renau
, J.T. Scheuer
, et al.
·
International Conference on Ion Implantation Technology
·
2
Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
2012
·
Hugh Park
, Stan Todorov
, et al.
·
AIP conference proceedings
·
1
Correlation of screen oxide thickness and iron levels introduced during batch high-current implants
2003
·
S.S. Todorov
, A.F. Bertuch
, et al.
·
International Conference on Ion Implantation Technology
·
1
Investigation of energy purity of Sub-10 keV B/sup +/ implants on a Varian VIISion PLUS ion implanter
2003
·
S.S. Todorov
, G.B. Latona
, et al.
·
International Conference on Ion Implantation Technology
·
1
A new, in-line method for separating frontside/backside metalilic contamination from implantation
2002
·
J. Sherry
, J. Lowell
, et al.
·
International Conference on Ion Implantation Technology
Oxygen implants using water vapor as source feed gas in high and medium current implanters
2002
·
W. Platow
, S. Todorov
·
International Conference on Ion Implantation Technology
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Works count:
15
Citation count:
44
H-index:
4
I10-index:
1
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