Author

Yu. B. Samsonenko

Observed names: J.B. Samsonenko, Samsonenko, Y. B., Y B Samsonenko, Y. B. Samsonenko, YU. B. SAMSONENKO, YURII SAMSONENKO, Yu B Samsonenko, Yu B. Samsonenko, Yu.B. Samsonenko, Yuri Samsonenko, Yuriy Samsonenko

Observed institutions: Russian Academy of Sciences, Saint Petersburg Academic University, St Petersburg University, ITMO University, Durham University, Peter the Great St. Petersburg Polytechnic University, St. Petersburg Department of Steklov Institute of Mathematics, Steklov Mathematical Institute, Institute for Analytical Instrumentation, Ioffe Institute

ORCID: 0000-0002-7119-3925

Observed ORCID: 0000-0002-7119-3925

OpenAlex ID: A5043200764

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

2005 · V. G. Dubrovskii, G. E. Cirlin, et al. · Physical Review B · 305

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

2010 · G. E. Cirlin, V. G. Dubrovskii, et al. · Physical Review B · 224

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Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

2009 · G. E. Cirlin, V. G. Dubrovskii, et al. · physica status solidi (RRL) - Rapid Research Letters · 135

Role of nonlinear effects in nanowire growth and crystal phase

2009 · V. G. Dubrovskii, N. V. Sibirev, et al. · Physical Review B · 101

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

2009 · G. E. Cirlin, A. D. Bouravleuv, et al. · Nanoscale Research Letters · 60

Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

2016 · V. G. Dubrovskii, I. V. Shtrom, et al. · Crystal Growth & Design · 59

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

2004 · V.G. Dubrovskii, G.E. Cirlin, et al. · Journal of Crystal Growth · 57

On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature

2004 · V. G. Dubrovskii, I. P. Soshnikov, et al. · physica status solidi (b) · 56

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

2005 · G. E. Cirlin, V. G. Dubrovskii, et al. · Semiconductors · 54

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates

2010 · M H Sun, E S P Leong, et al. · Nanotechnology · 49

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Optical study of GaAs quantum dots embedded into AlGaAs nanowires

2011 · V N Kats, V P Kochereshko, et al. · Semiconductor Science and Technology · 39

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Terahertz generation by GaAs nanowires

2013 · V. N. Trukhin, A. S. Buyskikh, et al. · Applied Physics Letters · 33

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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

2010 · B. V. Novikov, S. Yu. Serov, et al. · physica status solidi (RRL) - Rapid Research Letters · 32

STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques

1996 · G.M. Guryanov, G.E. Cirlin, et al. · Surface Science · 26

Transient carrier transfer in tunnel injection structures

2008 · V. G. Talalaev, J. W. Tomm, et al. · Applied Physics Letters · 25

Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

2011 · Yu. B. Samsonenko, G. E. Cirlin, et al. · Semiconductors · 23

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

2007 · I. P. Soshnikov, G. É. Cirlin, et al. · Physics of the Solid State · 19

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

2016 · G. E. Cirlin, I. V. Shtrom, et al. · Semiconductors · 17

Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy

1995 · G.M. Guryanov, G.E. Cirlin, et al. · Surface Science · 17

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

2018 · G. E. Cirlin, R. R. Reznik, et al. · Semiconductors · 13

Piezoelectric effect in GaAs nanowires

2011 · I. P. Soshnikov, Dm. E. Afanas’ev, et al. · Semiconductors · 12

Hexagonal structures in GaAs nanowhiskers

2008 · I. P. Soshnikov, G. E. Cirlin, et al. · Technical Physics Letters · 12

Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

2016 · A. E. Zhukov, G. E. Cirlin, et al. · Semiconductors · 11

The initial stage of growth of crystalline nanowhiskers

2010 · N. V. Sibirev, M. B. Nazarenko, et al. · Semiconductors · 11

Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

2009 · U. Perinetti, N. Akopian, et al. · Applied Physics Letters · 10

Works count: 124

Citation count: 1,648

H-index: 17

I10-index: 26