Work

Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

Year: 2009

Type: article

Abstract: We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime measurements reveal an exciton lifetime of 500 ps. Polarization measurements show an exciton fine structure splitting of 15 μeV and allow to identify the exciton and charged exciton transitions with linewidth as narrow as 23 μeV.

Source: Applied Physics Letters

DOI: 10.1063/1.3125430

Authors: U. Perinetti, N. Akopian, Yu. B. Samsonenko, A. D. Bouravleuv, G. E. Cirlin, V. Zwiller

Institutions: Delft University of Technology, Institute for Analytical Instrumentation, Ioffe Institute

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1969995013

FWCI: 0.501

Cites: 24

Cited by: 10

Related to: 10