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Ronald G. Filippi

Observed names: R Filippi, R. Filippi, R. Fillipi, R. G. Filippi, R.G Filippi, R.G. Filippi, Ronald Filippi
OpenAlex ID: A5043620810
Electromigration threshold in copper interconnects
2001 · P.-C. Wang, R. G. Filippi · Applied Physics Letters · 122
The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs
1995 · R. G. Filippi, G. A. Biery, et al. · Journal of Applied Physics · 72
The effect of current density and stripe length on resistance saturation during electromigration testing
1996 · R. G. Filippi, R. A. Wachnik, et al. · Applied Physics Letters · 53
Via-Depletion Electromigration in Copper Interconnects
2006 · C.J. Christiansen, B. Li, et al. · IEEE Transactions on Device and Materials Reliability · 30
Effect of metal line width on electromigration of BEOL Cu interconnects
2018 · Seungman Choi, Cathryn Christiansen, et al. · IEEE International Reliability Physics Symposium proceedings · 27
A time-dependent clustering model for non-uniform dielectric breakdown
2013 · E. Wu, B. Li, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects
2009 · R. G. Filippi, P.-C. Wang, et al. · IEEE International Reliability Physics Symposium proceedings · 25
Threshold electromigration failure time and its statistics for Cu interconnects
2006 · Baozhen Li, Cathryn Christiansen, et al. · Journal of Applied Physics · 25
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
2004 · D. Edelstein, H. Rathore, et al. · IEEE International Reliability Physics Symposium proceedings · 23
A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology
2006 · S. Sankaran, S. Arai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing
2002 · R. G. Filippi, R. A. Wachnik, et al. · Journal of Applied Physics · 20
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
2004 · R.G. Filippi, J.F. McGrath, et al. · IEEE International Reliability Physics Symposium proceedings · 19
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
2004 · D. Edelstein, C. Davis, et al. · IEEE International Interconnect Technology Conference (IITC) · 18
Paradoxical predictions and a minimum failure time in electromigration
1995 · R. G. Filippi, G. A. Biery, et al. · Applied Physics Letters · 18
Evidence of The Electromigration Short-Length Effect in Aluminum-Based Metallurgy With Tungsten Diffusion Barriers
1993 · Ronald G. Filippi, Glenn A. Biery, et al. · MRS Proceedings · 17
Application of three-parameter lognormal distribution in EM data analysis
2006 · Baozhen Li, Emmanuel Yashchin, et al. · Microelectronics Reliability · 16
Minimum Void Size and 3-Parameter Lognormal Distribution for EM Failures in Cu Interconnects
2006 · Baozhen Li, Cathryn Christiansen, et al. · IEEE International Reliability Physics Symposium proceedings · 15
Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability
2002 · R.A. Wachnik, R.G. Filippi, et al. · Symposium on VLSI Technology · 14
Implications of a threshold failure time and void nucleation on electromigration of copper interconnects
2010 · R. G. Filippi, P.-C. Wang, et al. · Journal of Applied Physics · 12
Effect of copper on the microstructure and electromigration lifetime of Ti–AlCu–Ti fine lines in the presence of tungsten diffusion barriers
1996 · A. G. Domenicucci, R. G. Filippi, et al. · Journal of Applied Physics · 12
Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections
1993 · Hazara S. Rathore, R. G. Filippi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching
2001 · R.G Filippi, M.A Gribelyuk, et al. · Thin Solid Films · 11
Correlation between a threshold failure time and void nucleation for describing the bimodal electromigration behavior of copper interconnects
2009 · R. G. Filippi, P.-C. Wang, et al. · Applied Physics Letters · 8
Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics
2001 · P.-C. Wang, R.G. Filippi, et al. · IEEE International Interconnect Technology Conference (IITC) · 8
Applications of clustering model to bimodal distributions for dielectric breakdown
2017 · Ernest Y. Wu, Ronald Bolam, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 7
Works count: 58
Citation count: 718
H-index: 16
I10-index: 22
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