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Nandasiri Samarakone

Observed name: N. Samarakone
OpenAlex ID: A5058633552
A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications
2011 · M. Schroter, P. Kolev, et al. · IEEE MTT-S International Microwave Symposium digest · 20
A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications
2011 · M. Schroter, P. Kolev, et al. · IEEE MTT-S International Microwave Symposium digest · 15
Sub-half-micron deep-UV lithography using wet and dry developable resist schemes
1990 · Maaike Op de Beeck, Nandasiri Samarakone, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13
Extending immersion lithography with high-index materials: results of a feasibility study
2007 · Harry Sewell, Jan Mulkens, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 10
Double printing through the use of ion implantation
2008 · Nandasiri Samarakone, Paul Yick, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 9
Improving the performance and usability of a wet-developable DUV resist for sub-500nm lithography
1991 · Nandasiri Samarakone, Veerle Van Driessche, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
An Update on the Progress in High-n Immersion Lithography
2008 · Harry Sewell, Paul Graeupner, et al. · Journal of Photopolymer Science and Technology · 5
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Extending immersion lithography with high index materials Results of a feasibility study - art. no. 65201M
2007 · Harry Sewell, Jan Mulkens, et al. · 5
Quantitative line edge roughness characterization for sub-0.25-μm DUV lithography
1999 · Avinash Kant, George Talor, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Evaluation of methods to reduce linewidth variation due to topography for i-line and deep-UV lithography
1992 · Miles J. Gehm, Jr., Patrick Jaenen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Time temperature and other process variables in the warm water Intermediate Development Bake
1991 · Nandasiri Samarakone, Patrick Jaenen, et al. · Microelectronic Engineering · 3
DPL performance analysis strategy with conventional workflow
2007 · Nobuhito Toyama, Yuichi Inazuki, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC
1998 · Viswanathan Ramanathan, Shixiong Chen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Comparative study of i-line and DUV lithography for 0.35 um and beyond
1995 · Nandasiri Samarakone, Wayne H. Chang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Improved resist contrast with novolac based E-beam resists using modified development procedures
1991 · R. Jonckheere, N. Samarakone, et al. · Microelectronic Engineering · 1
Characterization of the intermediate development bake as applied to I-line lithography
1990 · Nandasiri Samarakone, Patrick Jaenen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Enhanced I-line resist profiles through the use of an intermediate development bake
1990 · N. Samarakone, P. Jaenen, et al. · Microelectronic Engineering · 1
Comparing inorganic and organic BARC for a deep submicron gate patterning and etch
1998 · Julia M. Wu, Sagar Kekare, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC.
1998 · Ramanathan, Shuan Chen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 19
Citation count: 100
H-index: 6
I10-index: 4
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