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Mustafa H. Alqaysi

Observed names: M H Alqaysi, M. H. Alqaysi, M.H. Alqaysi
ORCID: 0000-0001-6299-7502
Observed ORCID: 0000-0001-6299-7502
OpenAlex ID: A5059050484
The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation
2020 · K. Ahmeda, B. Ubochi, et al. · Microelectronics Reliability · 13
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Impact of interface traps/defects and self‐heating on the degradation of performance of a 4H‐SiC VDMOSFET
2019 · Mustafa H. Alqaysi, Antonio Martinez, et al. · IET Power Electronics · 13
Influence of temperature and dimension in a 4H-SiC vertical power MOSFET
2020 · M H Alqaysi, A Martinez, et al. · Engineering Research Express · 2
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Investigation of Defects Generation on Self-Heating of GaN HEMTs
2026 · K. Ahmeda, B. Ubochi, et al. · Journal of Physics Conference Series
Works count: 4
Citation count: 28
H-index: 2
I10-index: 2
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