Impact of interface traps/defects and self‐heating on the degradation of performance of a 4H‐SiC VDMOSFET
Year: 2019
Type: article
Source: IET Power Electronics
Institutions: Swansea University, Middle Technical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2965532062