Author

Masaki Yoshizawa

Observed names: M. Yoshizawa, 正樹吉澤

Observed institutions: Tokyo Institute of Technology, Sony Corporation (United States), IMEC, Sony (Japan), Sophia University, Massachusetts Institute of Technology

OpenAlex ID: A5065032476

Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy

1997 · Masaki Yoshizawa, Akihiko Kikuchi, et al. · Japanese Journal of Applied Physics · 387

Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

1998 · Masaki Yoshizawa, Akihiko Kikuchi, et al. · Journal of Crystal Growth · 104

Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method

2002 · Masaki Yoshizawa, Shigeru Moriya · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 61

Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method

2000 · Masaki Yoshizawa, Shigeru Moriya · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 20

Edge roughness evaluation method for quantifying at-size beam blur in electron-beam lithography

2000 · Masaki Yoshizawa, Shigeru Moriya · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16

High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

1998 · K. Kishino, A. Kikuchi, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 15

Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method

2001 · Masaki Yoshizawa, Shigeru Moriya · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11

Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA lithography

2006 · Masaki Yoshizawa, Vicky Philipsen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 10

Resolution limiting mechanism in electron beamlithography

2000 · M. Yoshizawa, S. Moriya · Electronics Letters · 10

Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography

2004 · Masaki Yoshizawa, Shigeru Moriya, et al. · Japanese Journal of Applied Physics · 7

Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy

1998 · Nobuhiko Fujita, Masaki Yoshizawa, et al. · Journal of Crystal Growth · 7

Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography

2006 · Masaki Yoshizawa, Vicky Philipsen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6

A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

2002 · Masaki Yoshizawa, T. A. Savas · Japanese Journal of Applied Physics · 6

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Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE

1998 · Akihiko Kikuchi, Masaki Yoshizawa, et al. · Journal of Crystal Growth · 6

Lithography of choice for the 45-nm node: new medium, new wavelength, or new beam?

2004 · Fumikatsu Uesawa, Mikio Katsumata, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5

Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes

2006 · Yuri Aksenov, Peter Zandbergen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4

Impact of the absorber thickness variation on the imaging performance of ArF immersion lithography

2005 · Masaki Yoshizawa, Vicky Philipsen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

2005 · S. Nohdo, S. Omori, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3

Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process

2004 · Masaki Yoshizawa, Kumiko Oguni, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

Challenges to Ultra-thin Resist Process for LEEPL

2004 · Masaki Yoshizawa, Yasuyuki Miyamoto, et al. · Journal of Photopolymer Science and Technology · 3

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Impacts of 30-nm-thick resist on improving resolution performance of low-energy electron beam lithography

2004 · Masaki Yoshizawa, Shigeru Moriya, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2

First via-hole TEG fabricated by using 90-nm CMOS technology and proximity electron lithography: electric and lithographic results

2004 · Tetsuya Kitagawa, Masaki Yoshizawa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Analysis of critical dimension uniformity for LEEPL

2004 · Masaki Yoshizawa, Kazuya Iwase, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patterns

2001 · Masaki Yoshizawa, Shigeru Moriya · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Some thoughts on business carriers based on technology background

2016 · Masaki Yoshizawa · The Japan Society of Applied Physics

Works count: 32

Citation count: 696

H-index: 9

I10-index: 9