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H. Nayakama

Institution: IBM (United States)
Observed institution: IBM (United States)
OpenAlex ID: A5066084751
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
2005 · E. Leobandung, H. Nayakama, et al. · Symposium on VLSI Technology · 63
Works count: 1
Citation count: 63
H-index: 1
I10-index: 1
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