Author

Yuuki Ishida

Observed names: Y Ishida, Y. Ishida, Yuuki ISHIDA, Yuuki Ishida Yuuki Ishida

Institutions: Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology

Observed institutions: Semiconductor Frontier Research Center, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology

ORCID: 0000-0002-6567-348X

Observed ORCID: 0000-0002-6567-348X

OpenAlex ID: A5069735484

Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

2001 · S. F. Chichibu, M. Sugiyama, et al. · Applied Physics Letters · 88

Optical and structural studies in InGaN quantum well structure laser diodes

2001 · Shigefusa F. Chichibu, Takashi Azuhata, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 75

Raman studies on phonon modes in cubic AlGaN alloy

1999 · H. Harima, T. Inoue, et al. · Applied Physics Letters · 74

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

1998 · H Okumura, H Hamaguchi, et al. · Journal of Crystal Growth · 74

Detection of defects in SiC crystalline films by Raman scattering

2001 · S. Nakashima, Y. Nakatake, et al. · Physica B Condensed Matter · 68

Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

1998 · H. Okumura, H. Hamaguchi, et al. · Applied Physics Letters · 63

Optical Constants of Cubic GaN, AlN, and AlGaN Alloys

2000 · Takanobu Suzuki Takanobu Suzuki, Hiroyuki Yaguchi Hiroyuki Yaguchi, et al. · Japanese Journal of Applied Physics · 60

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Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells

2003 · SF. Chichibu, T. Onuma, et al. · Journal of Applied Physics · 50

Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

2003 · S. F. Chichibu, T. Onuma, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 49

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

2013 · Shiyang Ji, Kazutoshi Kojima, et al. · Journal of Crystal Growth · 42

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

2003 · Kin Kiong Lee, Y. Ishida, et al. · IEEE Electron Device Letters · 41

Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition

1997 · Yuuki Ishida Yuuki Ishida, Tetsuo Takahashi Tetsuo Takahashi, et al. · Japanese Journal of Applied Physics · 41

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The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

2003 · Takeshi Ohshima, Kin Kiong Lee, et al. · Japanese Journal of Applied Physics · 40

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Effect of Reduced Pressure on 3C‐SiC Heteroepitaxial Growth on Si by CVD

2006 · Y. Ishida, T. Takahashi, et al. · Chemical Vapor Deposition · 34