The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
Year: 2003
Type: article
Abstract: The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 °C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200 °C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm 2 /V·s. The leakage current of gate oxide was of a few tens of nA/cm 2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
DOI: 10.1143/jjap.42.l625
Authors: Takeshi Ohshima, Kin Kiong Lee, Yuuki Ishida, Kazutoshi Kojima, Yasunori Tanaka, Tetsuo Takahashi, Masahito Yoshikawa, Hajime Okumura, Kazuo Arai, Tomihiro Kamiya
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2017301136