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Mohamed Ali Belaïd

Observed names: M. A. Belaid, M. Belaid, M.A Belaid, M.A. Belaid, M.A. Belaïd, Mohamed A. Belaid, Mohamed Ali Belaid
Observed institutions: Centre National de la Recherche Scientifique, Umm al-Qura University, Laboratoire Plasma et Conversion d'Energie, Groupe de Physique des Matériaux, Université de Toulouse, Université de Rouen Normandie, University of Gabès, University of Sousse
ORCID: 0000-0002-8181-5468
Observed ORCID: 0000-0002-8181-5468
OpenAlex ID: A5072059692
Reliability study of power RF LDMOS device under thermal stress
2006 · M.A. Belaïd, K. Ketata, et al. · Microelectronics Journal · 39
Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices
2005 · M.A. Belaid, K. Ketata, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 35
Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests
2013 · M. Tlig, J. Ben Hadj Slama, et al. · Microelectronics Reliability · 20
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors
2010 · M.A. Belaïd, K. Daoud · Microelectronics Reliability · 19
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability
2005 · M.A. Belaïd, K. Ketata, et al. · Microelectronics Reliability · 19
Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF
2005 · H. Maanane, M. Masmoudi, et al. · Microelectronics Reliability · 18
A Comprehensive Approach to Flexible LVRT Strategies for Inverter-Based PPMs Enhancing Voltage-Support, Overcurrent Protection, and DC-Link Voltage Quality
2024 · Fathia Letaief, Mahmoud Hamouda, et al. · IEEE Access · 14
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Power RF N-LDMOS ageing effect on conducted electromagnetic interferences
2013 · Mohamed Tlig, Jaleleddine Ben Hadj Slama, et al. · International Multi-Conference on Systems, Signals & Devices (SSD) · 12
Symptom reliability: S‐parameters evaluation of power laterally diffused‐metal–oxide–semiconductor field‐effect transistor after pulsed‐RF life tests for a radar application
2018 · Mohamed Ali Belaïd · IET Circuits Devices & Systems · 11
Hot carrier reliability of RF N- LDMOS for S Band radar application
2006 · M. Gares, H. Maanane, et al. · Microelectronics Reliability · 11
2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device
2006 · M.A. Belaïd, K. Ketata, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8
Performance drifts of N-MOSFETs under pulsed RF life test
2014 · M.A. Belaïd, M. Gares, et al. · Microelectronics Reliability · 7
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests
2006 · M.A. Belaïd, K. Ketata, et al. · Microelectronics Reliability · 7
Characterization and modelling of power RF LDMOS transistor including self-heating effects
2005 · M.A. Belaid, H. Maanane, et al. · International Conference on Microelectronics (ICM) · 7
Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure
2024 · Mohammed Almatrafi, Mohamed Ali Belaïd · Case Studies in Thermal Engineering · 6
Power loss model and efficiency analysis of grid-connected seven-switch boost-type photovoltaic current source inverter using two power switches configurations
2023 · Kawther Ezzeddine, Mahmoud Hamouda, et al. · Electrical Engineering · 6
Tri-layer linearly-polarized discrete lens antenna operating in X-band, design & characterization
2018 · Hamza Kaouach, Mohamed Ali Belaid · AEU - International Journal of Electronics and Communications · 6
Experimental study on the EMI and switching time evolution of IGBT devices after operating aging tests
2014 · Mohamed Tlig, Jaleleddine Ben Hadj Slama, et al. · International Conference on Electrical Sciences and Technologies in Maghreb · 6
Study of hot-carrier effects on power RF LDMOS device reliability
2007 · M. Gares, M.A. Belaïd, et al. · Microelectronics Reliability · 6
Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests
2018 · M.A. Belaïd · Microelectronics Reliability · 5
RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band
2020 · Mohamed Ali Belaïd, Ahmed Almusallam, et al. · IET Circuits Devices & Systems · 4
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Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests
2016 · M.A. Belaïd, H. Kaouach, et al. · Microelectronics Reliability · 4
Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests
2015 · M.A. Belaïd · Microelectronics Reliability · 4
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests
2014 · M.A. Belaïd, A.M. Nahhas, et al. · Microelectronics Journal · 4
Hot-carrier effects on power RF LDMOS device reliability
2008 · M.A. Belaid, K. Ketata · International Workshop on Thermal Investigations of ICs and Systems · 4
Works count: 56
Citation count: 310
H-index: 10
I10-index: 10
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