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Geraldine Chaumont

Observed names: Chaumont, G., G. Chaumont
OpenAlex ID: A5073729360
Charge Collection in Power MOSFETs for SEB Characterisation—Evidence of Energy Effects
2010 · V. Ferlet-Cavrois, F. Sturesson, et al. · IEEE Transactions on Nuclear Science · 24
The Effects of ELDRS at Ultra-Low Dose Rates
2010 · Dakai Chen, James D. Forney, et al. · IEEE Radiation Effects Data Workshop (REDW) · 24
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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012 · V. Ferlet-Cavrois, C. Binois, et al. · IEEE Transactions on Nuclear Science · 22
Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates
2011 · Dakai Chen, Ronald Pease, et al. · IEEE Transactions on Nuclear Science · 19
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Effect of Ion Energy on Power MOSFET's Oxide Reliability
2012 · M. Naceur, A. D. Touboul, et al. · IEEE Transactions on Nuclear Science · 10
On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination
2014 · A. Privat, A. D. Touboul, et al. · IEEE Transactions on Nuclear Science · 9
TID and SEE Responses of Rad-Hard A/D Converter RHFAD128
2019 · G. Chaumont, F. Malou, et al. · IEEE Radiation Effects Data Workshop (REDW) · 7
Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation
2014 · A. Privat, A. D. Touboul, et al. · IEEE Transactions on Nuclear Science · 7
Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
2013 · A. Privat, A. D. Touboul, et al. · IEEE Transactions on Nuclear Science · 7
TID and SEE Responses of Rad-Hardened A/D Converters
2010 · Geraldine Chaumont, Andre Uguen, et al. · IEEE Radiation Effects Data Workshop (REDW) · 7
TID and SEE Characterizations of New Radiation-Hardened Bipolar Operational Amplifiers
2009 · Geraldine Chaumont, Benoit Cornanguer, et al. · IEEE Radiation Effects Data Workshop (REDW) · 6
Velocity effect on heavy ion-induced gate oxide latent defects
2010 · Touboul, Antoine, Portier, M., et al. · HAL · 2
The RHRPMICL1A Integrated Current Limiter: Radiation Tests and High Voltage Application
2019 · Salvatore Pappalardo, Ignazio Mirabella, et al. · European Space Power Conference (ESPC) · 1
Extended Temperature (−40/+90°C) Ultra Low Power Consumption with High Average Output Power (>+3 dBm) 1.55μm TOSA Module for up to 11.3 Gb/s 100 km Dispersion Compensation Free Transmission Metro Applications
2012 · J.-R. Burie, K. Bougueroua, et al. · Optical Fiber Communication Conference · 1
Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide
2011 · M. Naceur, A.D. Touboul, et al. · European Conference on Radiation and Its Effects on Components and Systems · 1
On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive operating area determination
2014 · Privat, A., Touboul, Antoine, et al. · HAL
Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operation
2013 · Privat, A., Touboul, Antoine, et al. · HAL
Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
2013 · Privat, A., Touboul, Antoine, et al. · HAL
Non-ionizing energy loss: an additional wear-out mechanism in latent reliability degradation
2012 · Naceur, M., Privat, A., et al. · HAL
Characterization of new radiation hardened bipolar operational amplifiers
2009 · Geraldine Chaumont, Benoit Cornanguer, et al. · European Conference on Radiation and Its Effects on Components and Systems
Works count: 20
Citation count: 147
H-index: 7
I10-index: 5
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