Work

Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

Year: 2013

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2013.2287974

Authors: A. Privat, A. D. Touboul, A. Michez, S. Bourdarie, J. R. Vaille, F. Wrobel, R. Arinero, N. Chatry, G. Chaumont, E. Lorfevre, F. Saigne

Institutions: Université Montpellier 2, Institut d'Électronique et des Systèmes, Office National d'Études et de Recherches Aérospatiales, STMicroelectronics (France), Centre National d'Études Spatiales

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: CHIST-ERA

OpenAlex ID: W1978550452

FWCI: 0.4

Cites: 29

Cited by: 7

Related to: 10