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Weike Luo

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates
2018 · Lei Pan, Xun Dong, et al. · Applied Surface Science · 53
Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD
2016 · Weike Luo, Liang Li, et al. · Journal of Alloys and Compounds · 45
High-quantum-efficiency ultraviolet solar-blind AlGaN photocathode detector with a sharp spectral sensitivity threshold at 300 nm
2018 · Guanghua Tang, Feng Yan, et al. · Applied Optics · 38
AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure
2018 · Q. Cai, W. K. Luo, et al. · Applied Physics Letters · 32
Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy
2018 · Weike Luo, Bin Liu, et al. · Applied Physics Letters · 19
Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
2018 · Zhonghui Li, Chuanhao Li, et al. · Superlattices and Microstructures · 15
Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106
2022 · Haifan You, Haiping Wang, et al. · IEEE Electron Device Letters · 11
Back-illuminated AlGaN heterostructure solar-blind avalanche photodiodes with one-dimensional photonic crystal filter
2020 · Qing Cai, Weike Luo, et al. · Optics Express · 11
A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching
2013 · Weike Luo, Liang Li, et al. · Applied Surface Science · 11
Growth of thin AlN nucleation layer and its impact on GaN-on-SiC heteroepitaxy
2020 · Chuanhao Li, Zhonghui Li, et al. · Journal of Alloys and Compounds · 10
Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy
2019 · Weike Luo, Bin Liu, et al. · Applied Physics Express · 8
High-Performance Al₀.₁Ga₀.₉N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations
2024 · Haifan You, Haiping Wang, et al. · IEEE Electron Device Letters · 7
Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology
2023 · Dongguo Zhang, Zhonghui Li, et al. · Journal of Crystal Growth · 7
Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology
2020 · Dongguo Zhang, Zhonghui Li, et al. · Applied Surface Science · 7
Al 0.1 Ga 0.9 N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown
2023 · Haifan You, Haiping Wang, et al. · Optics Express · 6
Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure
2020 · Qing Cai, Weike Luo, et al. · Journal of Physics D Applied Physics · 6
Low stress AlGaN/GaN heterojuction with AlGaN buffer grown on 6-inch semi-insulating SiC substrate
2023 · Daqing Peng, Zhonghui Li, et al. · Journal of Crystal Growth · 5
Influence of the nucleation layer annealing atmosphere on the resistivity of GaN grown by metalorganic chemical vapor deposition
2015 · Weike Luo, Liang Li, et al. · Journal of Alloys and Compounds · 5
Influence of surface step width of 4H-SiC substrates on the GaN crystal quality
2018 · Qiankun Yang, Dongguo Zhang, et al. · Journal of Crystal Growth · 4
Large scale epitaxy of AlGaN/GaN heterojunction films on h-BN/4H-SiC templates
2025 · Daqing Peng, Chuanhao Li, et al. · Journal of Crystal Growth · 1
Role of different kinds of superlattices on the strain engineering of GaN films grown on Si (111)
2017 · Qiankun Yang, Zhonghui Li, et al. · Superlattices and Microstructures · 1
Capacitance‐voltage characteristic of Ga‐ and N‐polar AlGaN/GaN HEMTs
2016 · Daqing Peng, Zhonghui Li, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Influence of SiH4 treatment time on the properties of GaN films grown on in-situ SiNx patterned sapphire substrate
2014 · Daqing Peng, Zhonghui Li, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Works count: 23
Citation count: 302
H-index: 10
I10-index: 10
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