Work

Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy

Year: 2019

Type: article

Source: Applied Physics Express

DOI: 10.7567/1882-0786/ab5fad

Authors: Weike Luo, Bin Liu, Zhonghui Li, Feng Yang, Zhenhua Li, Qiankun Yang, Hanchao Gao, Kechao Wang, Rong Zhang

Institution: Nanjing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2489245008, 基于非辐射共振能量转移机制的混合结构白光LED器件, G5599384349, G885335696

OpenAlex ID: W2993585404

FWCI: 0.447

Cites: 29

Cited by: 8

Related to: 10