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Christopher Mounet
Observed names:
C. Mounet,
Mounet, Christopher
Institution:
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Observed institutions:
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
CEA Grenoble,
Laboratoire d'Électronique des Technologies de l'Information,
Université Grenoble Alpes
ORCID:
0000-0001-6103-7833
Observed ORCID:
0000-0001-6103-7833
OpenAlex ID:
A5073786332
A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications
2011
·
Alexandre Siligaris
, Olivier Richard
, et al.
·
IEEE Journal of Solid-State Circuits
·
180
A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI
2010
·
Alexandre Siligaris
, Yasuhiro Hamada
, et al.
·
IEEE Journal of Solid-State Circuits
·
71
16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
2021
·
T. Francois
, J. Coignus
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
46
A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications
2011
·
Alexandre Siligaris
, Olivier Richard
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
45
Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length
2014
·
P. Nguyen
, S. Barraud
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
34
High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
2022
·
T. Francois
, J. Coignus
, et al.
·
IEEE Transactions on Electron Devices
·
31
CPW and discontinuities modeling for circuit design up to 110 GHz in SOI CMOS technology.
2007
·
A. Siligaris
, C. Mounet
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
29
A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
2009
·
Alexandre Siligaris
, Yasuhiro Hamada
, et al.
·
European Solid-State Circuits Conference (ESSCIRC)
·
19
CMOS SOI technology for WPAN. Application to 60 GHz LNA
2008
·
A. Siligaris
, C. Mounet
, et al.
·
IEEE International Conference on IC Design and Technology (ICICDT)
·
17
CMOS SOI Technology for WPAN: Application to 60 GHZ LNA
2010
·
A. Siligaris
, C. Mounet
, et al.
·
Lecture notes in electrical engineering
·
6
1.45-fJ/bit Access Two-Port SRAM Interfacing a Synchronous/Asynchronous IoT Platform for Energy-Efficient Normally Off Applications
2018
·
Reda Boumchedda
, Adam Makosiej
, et al.
·
IEEE Solid-State Circuits Letters
·
4
Electrical characterization of millimeter-wave interconnects on low-k and low-loss oxides for advanced 3D silicon interposers
2011
·
B. Reig
, P. Renaux
, et al.
·
European Microwave Conference (EuMC)
·
4
Employing 65 nm CMOS SOI for 60 GHz WPAN applications
2008
·
Christopher Mounet
, Alexandre Siligaris
, et al.
·
IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)
·
4
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM
2024
·
Panagiota Papavramidou
, Sebastien Ricavy
, et al.
·
IEEE International On-Line Testing Symposium (IOLTS)
·
3
Digital Radio Front-End for High Data Rate Impulse UWB System
2006
·
Dominique Morche
, Frederic Hameau
, et al.
·
IEEE International Conference on Electronics, Circuits and Systems (ICECS)
·
3
A BiCMOS upconverter with 1.9 GHz multiband frequency synthesizer for DVB-RCT application
2005
·
E. de Foucauld
, G. Billiot
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
3
A frequency measurement BIST implementation targeting gigahertz application
2012
·
Matthieu Dubois
, Emeric De Foucauld
, et al.
·
IEEE International Test Conference (ITC)
·
1
CPW anddiscontinuities modeling forcircuit design upto110GHz inSOICMOStechnology.
2007
·
Alexandre Siligaris
, C. Mounet
, et al.
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Works count:
19
Citation count:
500
H-index:
9
I10-index:
9
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