High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
Year: 2022
Type: article
Abstract: 16-kb 1T-1C ferroelectric random access memory (FeRAM) arrays are demonstrated for 130-nm node technology with TiN/HfO2:Si/TiN ferroelectric capacitors integrated into the back-end-of-line (BEOL). The 0- and 1-state distributions measured on the arrays demonstrate perfect yield at 4.8-V operation, with extrapolations suggesting that the memory window (MW) is still open at six-sigma statistics. A programming speed down to 4 ns at 4 V is highlighted at the array level, together with an endurance up to$10^{{7}}$cycles. Promising data retention up to$10^{{4}}$s at 125 °C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. The MW on 16-kb arrays remains open when using a 2.5-V programming voltage and when the capacitor area is decreased from 0.36$\mu \text{m}^{{2}}$down to 0.16$\mu \text{m}^{{2}}$, with a calculated programming energy lower than 100 fJ/bit. These results pave the way to competitive ultralow-power embedded nonvolatile memories (NVM) at more advanced nodes.
Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes, CEA Grenoble, Laboratoire d'Intégration des Systèmes et des Technologies, Centre National de la Recherche Scientifique, Aix-Marseille Université, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, NaMLab (Germany), Technische Universität Dresden, CEA Paris-Saclay - Etablissement de Saclay, CEA Paris-Saclay
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: H2020 Industrial Leadership
Award: G5714839561
OpenAlex ID: W4205608648