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Eric Chartier

Observed names: Chartier, E., Chartier, Eric, E Chartier, E. Chartier
Institution: III V Lab
OpenAlex ID: A5074750596
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
2016 · R. Aubry, J. C. Jacquet, et al. · IEEE Electron Device Letters · 70
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers
2010 · S. Piotrowicz, Z. Ouarch, et al. · IEEE MTT-S International Microwave Symposium digest · 54
State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
2008 · S. Piotrowicz, E. Morvan, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 51
First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
1991 · S.L. Delage, M.A. Di Forte-Poisson, et al. · Electronics Letters · 51
Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer
2000 · Olivier Noblanc, C. Arnodo, et al. · Materials science forum · 40
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
2011 · Olivier Jardel, Guillaume Callet, et al. · International Journal of Microwave and Wireless Technologies · 31
Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
1999 · O Noblanc, C Arnodo, et al. · Materials Science and Engineering B · 29
Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
1992 · R. Plana, J. Graffeuil, et al. · Electronics Letters · 24
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 · C. Potier, J-C Jacquet, et al. · European Microwave Conference (EuMC) · 23
12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
2014 · S. Piotrowicz, O. Jardel, et al. · IEEE MTT-S International Microwave Symposium digest · 23
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications
2012 · O. Jardel, M. Olivier, et al. · European Microwave Conference (EuMC) · 20
Power GaInP/GaAs HBT MMICs
1994 · S.L. Delage, D. Floriot, et al. · European Microwave Conference (EuMC) · 20
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements
1999 · D. Siriex, O. Noblanc, et al. · IEEE Transactions on Electron Devices · 19
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
2017 · Stéphane Piotrowicz, Jean-Claude Jacquet, et al. · International Journal of Microwave and Wireless Technologies · 18
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
2018 · C. Potier, S. Piotrowicz, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 17
Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs
2002 · H. Blanck, S.L. Delage, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 17
High-performance collector-up InGaP/GaAs heterojunctionbipolar transistor with Schottky contact
1999 · A. Girardot, A. Henkel, et al. · Electronics Letters · 16
Microwave power MESFET on 4H-SiC
1997 · O. Noblanc, E. Chartier, et al. · Diamond and Related Materials · 16
An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities
2006 · O. Jardel, R. Quere, et al. · European Microwave Integrated Circuits Conference · 15
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
2010 · S. Piotrowicz, Z. Ouarch, et al. · IEEE MTT-S International Microwave Symposium digest · 14
Ultra Compact X-Band GaInP/GaAs HBT MMIC amplifiers : 11W, 42% of PAE on 13mm2 and 8.7W, 38% of PAE on 9mm2
2006 · S. Piotrowicz, E. Chartier, et al. · IEEE MTT-S International Microwave Symposium digest · 14
High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes
1982 · N. Szydlo, E. Chartier, et al. · Applied Physics Letters · 14
First demonstration of AlInN/GaN HEMTs amplifiers at K band
2012 · O. Jardel, G. Callet, et al. · IEEE MTT-S International Microwave Symposium digest · 12
Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
2003 · R. Aubry, J.-C. Jacquet, et al. · The European Physical Journal Applied Physics · 12
Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
1998 · Olivier Noblanc, C. Arnodof, et al. · Materials science forum · 12
Works count: 74
Citation count: 814
H-index: 16
I10-index: 31
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