Work

High-performance collector-up InGaP/GaAs heterojunctionbipolar transistor with Schottky contact

Year: 1999

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19990460

Authors: A. Girardot, A. Henkel, S.L. Delage, M.A. DiForte-Poisson, E. Chartier, D. Floriot, S. Cassette, P.A. Rolland

Institution: Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2152137147

FWCI: 1.688

Cites: 6

Cited by: 16

Related to: 10