Author

Nadiia M. Kolomiiets

Observed names: Kolomiiets, N., N. M. Kolomiiets, N.M. Kolomiiets, Nadiia Kolomiiets

Institution: KU Leuven

Observed institution: KU Leuven

ORCID: 0000-0003-4347-3759

Observed ORCID: 0000-0003-4347-3759

OpenAlex ID: A5075940521

Conduction barrier offset engineering for DRAM capacitor scaling

2015 · Milan Pešić, Steve Knebel, et al. · Solid-State Electronics · 52

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

2016 · Milan Pešić, Steve Knebel, et al. · Journal of Applied Physics · 50

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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

2020 · Elena O. Filatova, Aleksei S. Konashuk, et al. · The Journal of Physical Chemistry C · 34

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Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

2015 · Steve Knebel, Milan Pešić, et al. · Journal of Applied Physics · 21

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Internal Photoemission Metrology of Inhomogeneous Interface Barriers

2017 · Valery Afanas'ev, Nadiia Kolomiiets, et al. · physica status solidi (a) · 17

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Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes

2020 · Aleksei S. Konashuk, Elena O. Filatova, et al. · The Journal of Physical Chemistry C · 9

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Hydrogen induced dipole at the Pt/oxide interface in MOS devices

2015 · Nadiia M. Kolomiiets, Valeri V. Afanas'ev, et al. · physica status solidi (a) · 8

Schottky barrier height engineering for next generation DRAM capacitors

2015 · Kyuho Cho, Thomas Mikolajick, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 4

Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission

2016 · N. M. Kolomiiets, V. V. Afanas'ev, et al. · ECS Journal of Solid State Science and Technology · 3

Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface

2017 · N.M. Kolomiiets, V.V. Afanas'ev, et al. · Microelectronic Engineering · 1

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Effect of La doping on interface barrier between Si‐passivated Ge and insulating HfO2

2016 · Nadiia M. Kolomiiets, Valery V. Afanas'ev, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Works count: 12

Citation count: 199

H-index: 7

I10-index: 5