Work

Schottky barrier height engineering for next generation DRAM capacitors

Year: 2015

Type: conference-paper

Source: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

DOI: 10.1109/ulis.2015.7063790

Authors: Kyuho Cho, Thomas Mikolajick, Milan Pesic, Steve Knebel, Changhwa Jung, Jaewan Chang, Hanjin Lim, Nadiia Kolomiiets, Valeri V. Afanas'ev, Uwe Schroeder

Institutions: Samsung Electronics (South Korea), NaMLab (Germany), KU Leuven

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978618368

FWCI: 0.416

Cites: 9

Cited by: 4

Related to: 10