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Steve Knebel

Observed names: Knebel, Steve, Knebel, Steve 1980-, S. Knebel
Institution: X-Fab (Germany)
OpenAlex ID: A5113501159
Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
2012 · Ekaterina Yurchuk, Johannes Müller, et al. · Thin Solid Films · 194
Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications
2017 · Min Hyuk Park, Tony Schenk, et al. · Nano Energy · 94
How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories
2016 · Milan Pesic, Steve Knebel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 77
Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films
2012 · Dayu Zhou, J. Müller, et al. · Applied Physics Letters · 67
Conduction barrier offset engineering for DRAM capacitor scaling
2015 · Milan Pešić, Steve Knebel, et al. · Solid-State Electronics · 52
Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
2016 · Milan Pešić, Steve Knebel, et al. · Journal of Applied Physics · 50
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Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors
2012 · Steve Knebel, Uwe Schroeder, et al. · IEEE Transactions on Device and Materials Reliability · 47
Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
2010 · Dayu Zhou, U. Schroeder, et al. · Journal of Applied Physics · 43
Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
2013 · Steve Knebel, Steve Kupke, et al. · IEEE Transactions on Electron Devices · 32
Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications
2012 · S. Kupke, S. Knebel, et al. · IEEE Electron Device Letters · 24
Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications
2015 · Steve Knebel, Milan Pešić, et al. · Journal of Applied Physics · 21
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Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability
2014 · S. Kupke, S. Knebel, et al. · IEEE International Reliability Physics Symposium proceedings · 17
The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation
2014 · Ebrahim Nadimi, Guntrade Roll, et al. · IEEE Transactions on Electron Devices · 17
Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress
2017 · Steve Knebel, Dayu Zhou, et al. · IEEE Transactions on Device and Materials Reliability · 12
OFF-state induced threshold voltage relaxation after PBTI stress
2012 · S. Kupke, S. Knebel, et al. · IEEE International Integrated Reliability Workshop final report · 11
Structural and electrical properties of sol–gel derived Ge nanocrystals in SiO2 films
2010 · S. Knebel, A. Kyriakidou, et al. · Applied Physics A · 9
An investigation of the electrical properties of metal-insulator-silicon capacitors with pyrolytic carbon electrodes
2010 · A. P. Graham, K. Richter, et al. · Journal of Applied Physics · 7
Ion-beam mixing in crystalline and amorphous germanium isotope multilayers
2011 · H. Bracht, M. Radek, et al. · Journal of Applied Physics · 5
Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation
2015 · Steve Kupke, Steve Knebel, et al. · IEEE Electron Device Letters · 4
Schottky barrier height engineering for next generation DRAM capacitors
2015 · Kyuho Cho, Thomas Mikolajick, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 4
Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis
2013 · S. Cosentino, S. Knebel, et al. · Applied Physics A · 4
An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications
2012 · A. P. Graham, T. Jay, et al. · Journal of Applied Physics · 4
The effects of Fluorine implantation and ex-situ Nitrogen anneal on Reliability improvement of 5V CMOSFETs
2022 · Hunjin Lee, Steven John Pilkington, et al. · IEEE International Conference on Semiconductor Electronics · 1
Setup of fast breakdown measurement and investigation of the breakdown behavior of a ulta thin dielectric
2009 · Knebel, Steve · LIBDOC - Westsächsische Hochschule Zwickau
Works count: 25
Citation count: 796
H-index: 13
I10-index: 15
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