Work

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Year: 2012

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2012.11.125

Authors: Ekaterina Yurchuk, Johannes Müller, Steve Knebel, Jonas Sundqvist, Andrew P. Graham, Thomas Melde, Uwe Schröder, Thomas Mikolajick

Institutions: NaMLab (Germany), Center Nanoelectronic Technologies, Technische Universität Dresden

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Freistaat Sachsen, European Regional Development Fund

OpenAlex ID: W1995362002

FWCI: 3.801

Cites: 27

Cited by: 194

Related to: 10