Work

The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation

Year: 2014

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2014.2313229

Authors: Ebrahim Nadimi, Guntrade Roll, Steve Kupke, Rolf Ottking, Philipp Planitz, Christian Radehaus, Michael Schreiber, Rimoon Agaiby, Martin Trentzsch, Steve Knebel, Stefan Slesazeck, Thomas Mikolajick

Institutions: K. N. Toosi University of Technology, NaMLab (Germany), Technische Universität Ilmenau, GWT-TUD GmbH (Germany), Chemnitz University of Technology, GlobalFoundries (Germany), Technische Universität Dresden

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2213645131

FWCI: 2.07

Cites: 26

Cited by: 17

Related to: 10