Author

Tsuyoshi Araoka

Observed institutions: Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Nara Institute of Science and Technology

OpenAlex ID: A5076500464

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

2013 · Yoshiyuki Yonezawa, Tomonori Mizushima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

2013 · Hiroshi Yano, Tsuyoshi Araoka, et al. · Materials science forum · 25

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

2014 · Tomonori Mizushima, Kensuke Takenaka, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 22

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

2014 · Mitsuo Okamoto, Youichi Makifuchi, et al. · Materials science forum · 18

Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD

2018 · Teruaki Kumazawa, Mituo Okamoto, et al. · The Japan Society of Applied Physics

Works count: 5

Citation count: 100

H-index: 4

I10-index: 4