Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation
Year: 2014
Type: article
Abstract: 4H-SiC(000-1) C-face was oxidized in H2O and H2 mixture gas (H2 rich wet ambient) for the first time. H2 rich wet ambient was formed by the catalytic water vapor generator (WVG) system, where the catalytic action instantaneously enhances the reactivity between H2 and O2 to produce H2O. The dependence of SiC oxidation rate on the H2O partial pressure was investigated. We fabricated 4H-SiC C-face MOS capacitor and MOSFET by the H2 rich wet re-oxidation following the dry O2 oxidation. The density of interface traps was reduced and the channel mobility was improved in comparison with the conventional O2 rich wet oxidation.
Source: Materials science forum
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Funder: Texas A and M University
OpenAlex ID: W2005755955