Author

A. Tönnesmann

Observed names: A Tönnesmann, A. Tonnesmann, A. Tönnesmann, Tönnesmann, A.

Institution: Forschungszentrum Jülich

Observed institution: Forschungszentrum Jülich

OpenAlex ID: A5080045346

Selectively grown vertical Si MOS transistor with reduced overlap capacitances

1998 · D Klaes, J Moers, et al. · Thin Solid Films · 22

Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth

1999 · J Moers, D Klaes, et al. · Solid-State Electronics · 17

Vertical silicon MOSFETs based on selective epitaxial growth

2005 · J. Moers, A. Tonnesmann, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 7

19 GHz vertical Si p -channel MOSFET

1999 · J. Moers, D. Klaes, et al. · Electronics Letters · 4

Untersuchung von pseudomorphen InGaAs-InAlAs-InP-High-Electron-Mobility-Transistoren im Hinblick auf kryogene Anwendungen

2003 · A. Tönnesmann, H. Lüth · JuSER (Forschungszentrum Jülich)

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Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer

2002 · R. Schmidt, A. Tonnesmann, et al. · IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)

Works count: 8

Citation count: 50

H-index: 4

I10-index: 2