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Jeffrey B. Shealy
Observed names:
J. B. Shealy,
J. Shealy,
J.B Shealy,
J.B. Shealy,
Jeff B. Shealy,
Jeffrey Shealy,
Shealy, J. B.
show all 7
Observed institutions:
Huntsville Hospital,
North Carolina State University,
University of California, Santa Barbara,
HRL Laboratories (United States),
Cornell University,
University of California System
show all 6
OpenAlex ID:
A5080107396
AlGaN/GaN HFET reliability
2009
·
Robert Trew
, Daniel Green
, et al.
·
IEEE Microwave Magazine
·
161
History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond
2013
·
David W. Runton
, Brian Trabert
, et al.
·
IEEE Microwave Magazine
·
125
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
2006
·
R.J. Trew
, Yueying Liu
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
97
A Manufacturable AlScN Periodically Polarized Piezoelectric Film Bulk Acoustic Wave Resonator (AlScN P3F BAW) Operating in Overtone Mode at X and Ku Band
2023
·
Ramakrishna Vetury
, Abhay Kochhar
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
67
Low loss, 3.7GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators
2017
·
Jeffrey B. Shealy
, Ramakrishna Vetury
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
58
High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications
2018
·
Ramakrishna Vetury
, Michael D. Hodge
, et al.
·
IEEE International Ultrasonics Symposium
·
57
Highly Doped AlScN 3.5 GHz XBAW Resonators with 16% k2eff for 5G RF Filter Applications
2020
·
Craig Moe
, R.H. Olsson
, et al.
·
IEEE International Ultrasonics Symposium
·
53
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
2001
·
J.B. Shealy
, J.A. Smart
, et al.
·
IEEE Microwave and Wireless Components Letters
·
47
452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
2019
·
Y. Shen
, P. Patel
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
43
High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
2005
·
R. Vetury
, Y. Wei
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
41
GaN HEMT thermal behavior and implications for reliability testing and analysis
2008
·
Daniel S. Green
, Bharath Vembu
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
34
XBAW, An Enabling Technology for Next Generation Resonators and Filter Solutions for 5G and Wi-Fi 6/6E/7 applications (Invited)
2022
·
Ramakrishna Vetury
, Abhay S. Kochhar
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
31
High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD
1993
·
J.B. Shealy
, M.M. Hashemi
, et al.
·
IEEE Electron Device Letters
·
31
Wideband 6 GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly Sc-doped AlN Thin Film
2021
·
D. Kim
, G. Moreno
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
30
High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators
2017
·
Michael D. Hodge
, Ramakrishna Vetury
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
29
X-band Bulk Acoustic Wave Resonator (XBAW) using Periodically Polarized Piezoelectric Films (P3F)
2023
·
A. Kochhar
, R. Vetury
, et al.
·
IEEE International Ultrasonics Symposium
·
27
High-efficiency GaAs-based pHEMT C-band power amplifier
1996
·
J. J. Brown
, J. A. Pusl
, et al.
·
IEEE Microwave and Guided Wave Letters
·
26
InP-based HEMTs: status and potential
2002
·
U.K. Mishra
, J.B. Shealy
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
·
25
High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts
1996
·
J.B. Shealy
, M. Matloubian
, et al.
·
IEEE Electron Device Letters
·
24
40.6 Watt, High Power 3.55 GHz Single Crystal XBAW RF Filters for 5G Infrastructure Applications
2020
·
Ya Shen
, Runqi Zhang
, et al.
·
IEEE International Ultrasonics Symposium
·
20
Single crystal aluminum nitride film bulk acoustic resonators
2016
·
James B. Shealy
, Jeffrey B. Shealy
, et al.
·
IEEE Radio and Wireless Symposium (RWS)
·
20
Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates
2006
·
Jeffrey D. Brown
, Shawn Gibb
, et al.
·
ECS Transactions
·
20
PDF
Metal–Organic Chemical Vapor Deposition‐Grown AlScN for Microelectromechanical‐Based Acoustic Filter Applications
2023
·
Craig G. Moe
, Jeff Leathersich
, et al.
·
physica status solidi (a)
·
19
Reliability testing of AlGaN/GaN HEMTs under multiple stressors
2011
·
Bradley D. Christiansen
, Ronald A. Coutu
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
16
RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's
2006
·
R.J. Trew
, Y. Liu
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
16
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Works count:
71
Citation count:
1,365
H-index:
20
I10-index:
35
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