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John M. Drynan

Observed names: J. Drynan, J. M. Drynan, J.M. Drynan
Institution: NEC (Japan)
OpenAlex ID: A5083137833
A 2.5-ns clock access, 250-MHz, 256-Mb SDRAM with synchronous mirror delay
1996 · T. Saeki, Y. Nakaoka, et al. · IEEE Journal of Solid-State Circuits · 87
A quarter-micrometer interconnection technology using a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer structure
1993 · T. Kikkawa, H. Aoki, et al. · IEEE Transactions on Electron Devices · 11
Data acquisition for experimental verification of an eddy current model for three dimensional inversion
1987 · J. Nyenhuis, J. Treece, et al. · IEEE Transactions on Magnetics · 11
Merged DRAM-logic in the year 2001
2002 · P.W. Diodato, L. Noda, et al. · Records of the IEEE International Workshop on Memory Technology, Design, and Testing · 8
Shared tungsten structures for FEOL/BEOL compatibility in logic-friendly merged DRAM
2002 · J.M. Drynan, K. Fukui, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Quarter-Micron Interconnection Technologies for 256-Mbit Dynamic Random Access Memories
1993 · Takamaro Kikkawa, Kuniko Kikuta, et al. · Japanese Journal of Applied Physics · 8
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A quarter-micron interconnection technology using Al-Si-Cu/TiN alternated layers
2002 · T. Kikkawa, H. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 /spl mu/m-scale embedded DRAM
1999 · S. Kamiyama, J.M. Drynan, et al. · Symposium on VLSI Technology · 5
Interactions Between Metallization or Diffusion Layers and Doped Silicon Plugs in Deep-Submicron Contact-Holes
1992 · John M. Drynan, Hiromitsu Hada, et al. · MRS Proceedings · 5
Amorphous-deposited polycrystalline silicon for contact-hole plugs
1991 · J. M. Drynan, T. Kikkawa · Applied Physics Letters · 4
Comparison of Cvd and Pvd Tungsten for Gigabit-Scale Dram Interconnections
1996 · John M. Drynan, Kuniaki Koyama · MRS Proceedings · 3
Measurement of the Induced Magnetic Field in a Flawed Tube
1986 · J. A. Nyenhuis, J. C. Treece, et al. · Review of Progress in Quantitative Nondestructive Evaluation · 3
Fabrication of polysilicon plugs for deep-submicron contact-holes
2002 · J.M. Drynan, E. Ikawa, et al. · International IEEE VLSI Multilevel Interconnection Conference · 2
Effect of Nitrogen Diffusion in Ti and TiTiN Films for Future DRAM Bit Line Interconnects and Plugs
1996 · John M. Drynan, Kuniaki Koyama · MRS Proceedings · 2
Effects and Applications of Multiple-Gas Rta Treatment on Ti-Based Metallization for Future Dram Devices
1995 · John M. Drynan, Kuniaki Koyama · MRS Proceedings · 2
TiN as a Phosphorus Outdiffusion Barrier Layer for WSi x /Doped-Polysilicon Structures
1993 · John M. Drynan, H. Hada, et al. · IEICE Transactions on Electronics · 1
Inversion of Eddy Current Data and the Reconstruction of Flaws, Part 1: Acquisition of Data
1987 · Jeff C. Treece, John M. Drynan, et al. · Review of Progress in Quantitative Nondestructive Evaluation · 1
Works count: 17
Citation count: 167
H-index: 6
I10-index: 3
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