Work

TiN as a Phosphorus Outdiffusion Barrier Layer for WSi x /Doped-Polysilicon Structures

Year: 1993

Type: article

Source: IEICE Transactions on Electronics

Authors: John M. Drynan, H. Hada, T. Kunio

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W284537705

FWCI:

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Cited by: 1

Related to: 10