Author

T. Kunio

Observed names: Kunio, T, T Kunio, T. KUNIO, Takemitsu KUNIO, Takemitsu Kunio, Takemitsu Kunio Takemitsu Kunio

Observed institutions: Kogakuin University, NEC (Japan), Kanazawa Institute of Technology, Battelle, Kokugakuin University, Yamaguchi University, Sumitomo Heavy Industries (Japan), Keio University, Japan Steel Works (Japan), IHI Corporation (Japan), Wolters Kluwer (Netherlands), Ajinomoto (Japan), Nagoya University, Musashi University

OpenAlex ID: A5113623941

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function

1992 · A. Tanabe, T. Takeshima, et al. · IEEE Journal of Solid-State Circuits · 81

NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors

2001 · T. Miwa, J. Yamada, et al. · IEEE Journal of Solid-State Circuits · 65

Three dimensional ICs, having four stacked active device layers

2003 · T. Kunio, K. Oyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 58

A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

2001 · H. Wakabayashi, Y. Saito, et al. · IEEE Transactions on Electron Devices · 54

An effective channel length determination method for LDD MOSFETs

1996 · K. Takeuchi, N. Kasai, et al. · IEEE Transactions on Electron Devices · 46

A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme

1996 · H. Koike, T. Otsuki, et al. · IEEE Journal of Solid-State Circuits · 42

A 30-ns 256-Mb DRAM with a multidivided array structure

1993 · T. Sugibayashi, T. Takeshima, et al. · IEEE Journal of Solid-State Circuits · 40

45-nm gate length CMOS technology and beyond using steep halo

2002 · H. Wakabayashi, M. Ueki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39

Sub-50-nm physical gate length CMOS technology and beyond using steep halo

2002 · H. Wakabayashi, M. Ueki, et al. · IEEE Transactions on Electron Devices · 38

The early stage of fatigue crack growth in martensitic steel

1981 · T. Kunio, M. Shimizu, et al. · International Journal of Fracture · 38

An effect of the second phase morphology on the tensile fracture characteristics of carbon steels

1975 · T. Kunio, M. Shimizu, et al. · Engineering Fracture Mechanics · 35

Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices

1996 · T. Mogami, H. Wakabayashi, et al. · IEEE Transactions on Electron Devices · 32

Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology

1990 · Y. Hayashi, S. Wada, et al. · Symposium on VLSI Technology · 26

Scaling limitations of gate oxide in p/sup +/ polysilicon gate MOS structures for sub-quarter micron CMOS devices

2002 · K. Uwasawa, T. Mogami, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25

Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM

2002 · K. Amanuma, T. Tatsumi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25

A 60 ns 1 Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme

2002 · H. Koike, T. Otsuki, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 24

Microstructural Aspects of the Threshold Condition for Nonpropagating Fatigue Cracks in Martensitic-Ferritic Structures

1979 · T Kunio, K Yamada · 24

Low-Voltage Switching Characteristics of SrBi2Ta2O9 Capacitors

1996 · Kazushi Amanuma Kazushi Amanuma, Takemitsu Kunio Takemitsu Kunio · Japanese Journal of Applied Physics · 22

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Viscoelastic analysis of residual stress in quenched thermosetting resin beams

1982 · Y. Miyano, M. Shimbo, et al. · Experimental Mechanics · 22

A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers

1991 · Y. Hayashi, K. Oyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21

A microprogrammable real-time video signal processor (VSP) for motion compensation

1988 · M. Yamashina, T. Enomoto, et al. · IEEE Journal of Solid-State Circuits · 21

The Role of Prior Austenite Grains in Fatigue Crack Initiation and Propagation in Low Carbon Martensite

1979 · T. KUNIO, M. SHIMIZU, et al. · Fatigue & Fracture of Engineering Materials & Structures · 20

A microprogrammable real-time video signal processor (VSP) LSI

1987 · M. Yamashina, T. Enomoto, et al. · IEEE Journal of Solid-State Circuits · 19

Design methodology for low-voltage MOSFETs

2002 · T. Andoh, A. Furukawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18

A 30 ns 256 Mb DRAM with multi-divided array structure

1993 · T. Sugibayashi, T. Takeshima, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 18

Works count: 108

Citation count: 1,295

H-index: 21

I10-index: 44